49th Annual Gaseous Electronics Conference
20-24 October 1996
Argonne, Il

General Information

The 49th Annual Gaseous Electronics Conference will be held 20-24 October 1996 in the conference facilities of the Advanced Photon Source (APS) at Argonne National Laboratory. The meeting is a topical conference of The American Physical Society.

The Gaseous Electronics Conference invites papers on basic phenomena and plasma processes in ionized gases, and on the relevant theory and measurement of basic atomic and molecular collision processes. Specifically, papers are encouraged on the roles of such processes in the breakdown and maintenance of discharges of all types. Applications of interest include, but are not limited to, plasma processing of materials and process gases, gas lasers, ion sources, gas discharge lamps, plasma chemistry, plasma-surface interactions, ionospheric phenomena, and similar topics. Although most papers will deal with low energy processes, papers that concern electronic or radiative processes produced by high energy electrons or heavy particles are appropriate.

FOR ADDITIONAL INFORMATION CONSULT THE GEC WEB SITE AT HTTP://WWW.GEC.ORG/GEC/

GEC '96 EXECUTIVE COMMITTEE

J. Norman Bardsley, Chairman
Lawrence Livermore National Lab

Michael A. Dillon, Secretary
Argonne National Lab

Harold M. Anderson, Treasurer
University of New Mexico

Mark J. Kushner, Chairman-Elect
University of Illinois

Thad G. Walker, Secretary-Elect
University of Wisconsin

David B. Graves, Past Secretary
University of California

Michael Barnes
Lam Research Corporation

J. William McConkey
University of Windsor, Canada

Robert Piejak
OSRAM Sylvania

Seiji Samukawa
NEC Corporation

Hotel Reservation Information

Headquarters for the conference will be the Hyatt Regency Oakbrook. All technical sessions will be held at Argonne National Laboratory in the conference center of the Advanced Photon Source (APS), the new 7.5 GeV synchrotron X-Ray facility. A block of 200-225 rooms has been reserved at the Hyatt Regency for conference attendees and their guests. Accommodations will be available at the special rate of $89 (single to quad.) When making your reservations, please identify yourself as an attendee of the "Gaseous Electronics Conference" in order to receive the conference rate. The address, telephone number and cut-off date for the hotel are listed below and on the enclosed reservation card.

Hyatt Regency Oakbrook Single/Double-Quad $89+tax
1909 Spring Road
Oakbrook, Illinois 60521
(708) 573 1234
fax (708) 573 1909
Cut-off date for reservations is 29 Sept. 1996. Reservations may be made by phone or by returning the enclosed reservation form.

About the Hotel
The Hyatt Regency Oak Brook is a modern tower nestled in a landscape of ponds, rock gardens and lush foliage adjacent to the magnificent Oakbrook Shopping Center which is strategically located about 20 minutes. from downtown Chicago. Within the confines of the hotel are two restaurants, a sports bar, comedy lounge, indoor heated pool, jogging trail, sauna and whirlpool and fitness area. Nearby are outstanding tennis and golf facilities. The Oakbrook Shopping Center adjacent to the hotel is the site of many additional restaurants and entertainment facilities.

Travel Information

Directions Coming From O'Hare:
Take 294 South, Exit Interstate 88 (East-West Tollway to Aurora). Exit Cermak

Road (after paying the toll). As you come off the exit ramp you will come to an intersection, proceed straight through the intersection, the hotel is located 3 blocks on the right side of the street.

Direction Coming From Midway:
Take 55 South, Exit 294 North, Exit Interstate 88 (East-West Tollway), Exit Cermak Road (after paying the toll). Proceed through the intersection, the hotel is located 3 blocks on the right side of the street.

Ground Transportation:
Argonne Conference Services recommends:
American Limousine - (708) 920 8888
United Limousine - (708) 969-3865 or Out of State (800) 826-0341
Oak Brook Limousine - (800) 654 1442 or (708) 495-1212

Program Information

Location of Sessions
All lecture technical sessions will be held 21-24 October 1996 in the conference center of the Advanced Photon Source (APS) at Argonne National Laboratory. The poster technical sessions will be held at the same location. Lunch (included in the registration fee) will be provided in the cafeteria beneath the main conference auditorium.

Reception and Registration
Registration and opening reception will be held from 7:00 p.m. to 9:00 p.m., Sunday, 24 October 1996, at the Hyatt Regency Oakbrook.

Banquet
The conference Banquet will be held Tuesday, 22 October from 7:00 p.m. to 9:00 p.m. at the Hyatt Regency Oakbrook and will be preceded by a social hour beginning at 6:00 p.m.

Invited Speakers Gaseous Electronics Conference
20-24 October 1996

1. PLASMA AND SURFACE CHEMISTRY IN SEMICONDUCTOR PROCESSING

Kouichi Ono, Mitsubishi Electric Corporation: "Chemical kinetics of Cl in Si etching."

Ellen Meeks, Sandia, California: "Models of gas-phase and surface chemistry for PECVD."

John Langan, Air Products: "Optimization of PECVD chamber cleans through fundamental studies of electronegative fluorinated gas discharges."

Amy Wendt:, U. Wisconsin: "Mechanisms for polysilicon passivation in hydrogen plasmas."

2. OPTICAL DIAGNOSTICS FOR ANALYSIS AND CONTROL

Harold Anderson, U. New Mexico: "Diode-laser absorption measurements of species concentrations."

Denice Denton, U. Wisconsin: "In-situ diagnostics of precursors to polymer deposition."

*J. R. Fincke, INEL: "Laser diagnostics for control of plasma sprays"

3. ELECTROMAGNETIC COUPLING AND PROBES IN DISCHARGES

John Keller, IBM: "The physics and development potential of inductively coupled reactors."

Toshiki Nakano, National Defense Academy, Yokosuka: "Comparison of ion and neutral temperatures in various high density plasma sources."

Mike Lieberman, UC Berkeley: "Models of high density reactors."

4. ADVANCES IN ELECTRON SCATTERING TECHNIQUES

Geoffrey James, JPL: "Absolute measurement of the total cross section for excitation of the 2p state of atomic H by electron impact."

Klaus Bartschat, Drake University: "Recent advances in the theory of electron-atom collisions."

Sandor Trajmar, JPL: "Creation and destruction of alignment and orientation in electron-atom collisions and their role in plasma polarization spectroscopy."

5. CRITICAL ELECTRON SCATTERING PROCESSES

Kurt Becker, CCNY: "Electron impact dissociative ionization of molecules relevant to plasma processing."

H. Sugai, Nagoya University: "Electron impact dissociation of molecules into neutral fragments."

Ann Orel, UC Davis: "Electron impact dissociation of molecules and molecular ions."

6. HEAVY PARTICLE COLLISIONS IN IONIZED GASES AND COLD TRAPS

Murray Holland, JILA: "Boltzmann equation approach to cold collisions."

Nigel Adams, U. Georgia: "Laboratory studies of ion-molecule reactions at thermal energies of relevance to the earth's atmosphere and instellar-medium."

7. RADIATION TRANSPORT AND PHOTON PROCESSES

Graham Lister, Osram: "Radiation transport and optical diagnostics in the lighting industry."

Thom Orlando, PNL: "Photon and electron stimulated desorption from surfaces."

Norman Tolk, Vanderbilt University: "Free-electron laser wavelength-selective materials alteration and photoexcitation spectroscopy."

8. ION-SURFACE INTERACTIONS

Wayne Rabalais, University of Houston: "Recent developments in silicon ion-beam epitaxy."

Luke Hanley, U. Illinois at Chicago: "Polyatomic ions for surface modification."

Barbara Cooper, Cornell U.: "Surface reactions of low energy ions."

*David Ruzic, U. Illinois: "Measurements of sputtering rates with low energy ions."

9. DEPOSITION OF DIAMOND AND DIAMOND-LIKE FILMS

Larry Curtiss, Argonne: "Reaction mechanisms for growth of diamond thin-films from bucky-ball precursors."

Dieter Gruen, Argonne: "Nucleation and stability in nancrystalline diamond from argon microwave plasmas."

John Angus, Case Western Reserve: "Diamond nucleation and growth by chemical vapor deposition."

10. DIELECTRIC ETCH TECHNIQUES AND MECHANISMS

John Arnold, Motorola: "Oxide etching."

Dan Vitkavage, Lucent Technologies (or Joel Cook, Lam Research): "Issues in reactor design for dielectric etch."

Toshio Goto, Nagoya University: "Study of radical behavior in fluorocarbon plasmas and control of SiO2 etching by injection of radicals."

Joe Cecchi, U. New Mexico: "Oxide etch mechanisms."

11. LASER DISCHARGES AND ABLATION

Yuri P. Raizer, Russian Academy of Sciences: "RF discharges at moderate pressures and RF-excitation of CO2 lasers."

Ron Gilgenbach, U. Michigan: "Plasma ionization dynamics of energy beam ablation of materials."

David Geohegan, ORNL: "Kinetics of laser-ablated plasmas."

12. MAGNETRON SPUTTERING AND PHYSICAL VAPOR DEPOSITION

William Sproul, Northwestern University: "Reactive sputtering of oxides."

Steven Gorbatkin, ORNL: "Plasma issues in the deposition of ultra-hard coatings."

*Stephen Rossnagel, IBM: "Liner formation and feature filling by ionized magnetron PVD and ECR plasma deposition."

13. PLASMA SPRAYS AND PLASMA TORCHES

Steven Girshick, University of Minnesota: "Nanostructured material preparation using plasma sprays."

Thomas Bernecki, Northwestern University: "Small Particle Plasma Spray Technology."

*Maher Boulos, U. Sherbrooke: "Physics and applications of plasma sprays."

Chong H. Chang, INEL: "Models of plasma torches."

14. PLASMA PROCESSING OF POLYMERS AND OTHER MATERIALS

Ellen Fisher, Colorado State U.: "Deposition of fluorocarbon polymer and conducting hydrocarbon polymer thin films from pulsed and continuous wave rf plasmas."

Michael Wertheimer, Ecole Polytechnique, Montreal: "Plasma polymerization and/or plasma-assisted ion plating."

15. DISCHARGES IN AIR AND ENVIRONMENTAL APPLICATIONS

Jen-Shih Chang, McMaster University: "Pilot plant tests of gas cleaning by electron-beam and coronal discharge techniques."

John Giuliani, Naval Research Laboratory: "Application of plasma arc to the remediation of shipboard waste."

Richard van Brunt, NIST: "Current issues in the physics of lightning."

16. PLASMAS IN DISPLAYS

Larry Weber, Plasmaco: "Recent developments in plasma display technology."

Leanne Pitchford, U. Toulouse: "2-D models of ac plasma panel discharges."

Gregory Parker, LLNL: "2-D models of plasma switches for display addressing."

17. WILL P. ALLIS PRIZE LECTURE: CHUN C. LIN, UNIVERSITY OF WISCONSIN

Electron-atom collisions: "An evergreen in physics and technology."

This meeting will also feature a special tutorial on the design and capabilities of the Advanced Photon Source which will include personalized (small groups) tours of the control, experimental and data acquisition facilities.

Support for Students

Limited funds are expected to be available to support students whose papers are accepted for presentation at the GEC. Requests for support must be sent to the secretary (address enclosed). Student applications will be approved only if an abstract has been received electronically by The American Physical Society as prescribed herein. A recommendation by the applicant's thesis or research advisor, and an agreement that the student will present the paper must be included with the request. Applicants will be notified of their support after the Executive Committee meeting 21-22 June 1996.


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