Program overview

TUESDAY MORNING, 5 OCTOBER 1999

10:30 BT1.01 Effect of electron and ion transport on the charge build-up of a microscopic structure exposed to plasma.

T. Makabe, J. Matsui, N. Nakano (Keio University at Yokohama, Japan)

10:45 BT1.02 Ion Transport Modeling in Non-Collisional RF Sheaths

Deepak Bose (Thermosciences Institute), T.R. Govindan, M. Meyyappan (NASA Ames Research Center)

11:00 BT1.03 Plasma -Sheath Interface Problem

Natalia Sternberg (Dept. of Mathematics and Computer Science, Clark university, Worcester, Mass. 01610), Marshall Slemrod (Center for Mathemtical Scienes, University of Wisconsin, Madison, WI. 53715)

11:15 BT1.04 Bohm Criterion for Sheaths and Shocks with Two Ion Species

Noah Hershkowitz (University of Wisconsin-Madison)

11:30 BT1.05 Modeling of the Field Reversal in a Capacitive RF Sheath

H.-B. Valentini (IPHT Inc, Jena, Germany), D. Kaiser (IAM FSU, Jena)

11:45 BT1.06 Ponderomotive instability of inductive discharges in argon

M. M. Turner (Dublin City University, Ireland), G. Cunge (Université Joseph Fourier, Grenoble, France), B. Crowley, D. Vender (Dublin City University, Ireland)

12:00 BT1.07 Ponderomotive Instability of Inductive Discharges in Electronegative Gases

M. M. Turner (Dublin City University, Ireland)

12:15 BT1.08 Instabilities in Electronegative Inductive Discharges

A. M. Marakhtanov, M. A. Lieberman, A. J. Lichtenberg (University of California at Berkeley)

10:30 BT2.01 Validation Issues in Oxide Etch Plasma Source Models

P Ventzek, S Rauf, D Coronell, V Arunachalam, T Sparks, M Hartig (Motorola Inc.), H Anderson, K Waters (University of New Mexico), H Hwang (Thermosciences Inst. NASA Ames)

10:45 BT2.02 Modeling of Oxide Etch Charging Effects

Helen Hwang, Deepak Bose (Thermosciences Institute), T.R. Govindan (NASA Ames Research Center)

11:00 BT2.03 Effect of SF_6 Addition to BCl_3 Etching Plasmas

Yao-Sheng Lee, Kaushal Upadhyaya, Prasad Gogineni, Karen Nordheden (Plasma Research Laboratory, University of Kansas)

11:15 BT2.04 Effect of Rare Gas Dilution of SF_6 Plasma on RIE Etching Characteristics of SiC

J.D. Ganguly (Air Force Research Laboratory, Wright-Patterson Air Force Base, OH), B.N. Bletzinger (Air Force Research Laboratory, Wright-Patterson Air Force Base, OH, Present address: ISSI, Dayton, OH)

11:30 BT2.05 Etching mechanism of silicon nitride in remote plasmas containing fluorine, oxygen and nitrogen

Bernd E.E. Kastenmeier, Peter J. Matsuo, Gottlieb S. Oehrlein (Department of Physics, State University of New York at Albany, Albany, NY 12222), Robert E. Ellefson, Louis C. Frees (Leybold Inficon Inc., East Syracuse, NY 13057-9714)

11:45 BT2.06 Measurement of Ion Flux passing through A Real-Contact-Hole-Size Capillary for SiO_2 etching

N. Ozawa, S. Noda, H. Tsuboi, Y. Hikosaka, K. Kinoshita, M. Sekine (Association of Super-Advanced Electronics Technologies (ASET))

12:00 BT2.07 Fabrication of Real-Contact-Hole-Size Capillary Plate to Study SiO_2 Etching Mechanism

S. Noda, Y. Hikosaka, N. Ozawa, H. Tsuboi, K. Kinoshita, M. Sekine (Association of Super-Advanced Electronics Technologies (ASET))

12:15 BT2.08 Absolute sputtering yields of Au due to Ar^+ impact at energies of 33 to 1000 eV

Thomas Stephen, Bert Van Zyl (University of Denver)