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Session EC17 - Scattering From Particles and Surfaces.
ORAL session, Monday morning, March 22
Room 263W, GWCC

[EC17.02] High resolution radial distribution function of pure amorphous silicon prepared by ion implantation

K. Laaziri, S. Roorda, M. Chicoine (Université de Montréal, Canada), S. Kycia (CHESS, Cornell University), L.J. Robertson (Oak Ridge National Laboratory), J. Wang, S.C. Moss (University of Houston)

The Radial Distribution Function (RDF) of pure amorphous silicon (a-Si) has been determined with a high degree of precision. Amorphous Si membranes of 10 \mum thickness were prepared by ion implantation and chemical etch. High energy x-ray diffraction measurements were performed to characterize annealed (600^\circC, 1hour) and as-implanted self-supporting a-Si membranes. In order to obtain high resolution atomic structural information, a large region of reciprocal space, up to Q = 55 Åwas covered. A reference measurement on c-Si powder was performed under similar experimental conditions, so as to determine a high resolution RDF of c-Si powder. Calculation of the first neighbor shell coordination (C_1) as a function of maximum Q indicates that measurement of S(Q) out to at least 40 Åis required to reliably determine the RDF. A 2% change in C_1 and subtle changes in the rest of the RDF were observed upon annealing, consistent with point defect removal. After annealing, C_1 = 3.88, which would explain why a-Si is less dense than c-Si.

Work at Houston was supported by the DOE/BES on DE-FG05-8745325.

Part E of program listing