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Session O17 - Heterostructures: General.
MIXED session, Thursday afternoon, March 20
Room 2215, Conv. Center

[O17.11] Barrier height at the n-n ZnSe/In_0.04Ga_0.96As heterojunction with Zn-rich interface.

C. Cai, M.I. Nathan (Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455), S. Rubini, L. Sorba, B. Mueller, A. Franciosi (Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy)

n-n ZnSe/In_0.04Ga_0.96As heterojunctions with Zn-rich interfaces grown by molecular beam epitaxy were studied by current- voltage(J-V) and capacitance-voltage(C-V) measurements. J-V curves indicate that this heterojunction behaves like a Schottky barrier with a barrier height of 0.89 eV and ideality factor of 1.2 if interpreted as thermonic emission. The barrier height is much higher than the band discontinuity of 0.26 eV at Zn-rich ZnSe/GaAs heterojunction by photocurrent measurements(V. Pellegrini etal. Appl.Phys.Lett Nov.18, 1996(in press)). The barrier height difference can be explained by modelling a negative delta sheet charge at the ZnSe/In_0.04Ga_0.96As interface.

Part O of program listing