Program overview

WEDNESDAY AFTERNOON, 8 OCTOBER 1997

13:30 NW1.01 High Density Plasma Modeling for Laser and Pulsed-Power Systems

Michael E. Jones (Los Alamos National Laboratory)

14:00 NW1.02 Parallel Monte Carlo Computations of a Plasma Etch Reactor

Iain D. Boyd (Mechanical amp; Aerospace Engineering, Cornell University, Ithaca, NY 14853)

14:30 NW1.03 Plasma sheath transition and Bohm criterion for finite \lambda_D

K.-U. Riemann (Theoretische Physik 1, Ruhr-Universität Bochum, D-44780 Bochum, Germany)

14:45 NW1.04 Attempts to make Particle Codes Approach Fluid Code Speeds Applied to RF Plasma Discharges

E. Kawamura, C. K. Birdsall (University of California at Berkeley), V. Vahedi (Lam Research Corp., Fremont CA)

15:00 NW1.05 Advantages and disadvantages of the nonlocal approach

D. Uhrlandt, M. Schmidt, R. Winkler (Institute for Nonthermal-Plasmaphysics Greifswald, Germany)

15:15 NW1.06 Pressure dependence of EEDF in low pressure Ar and Cl_2 UHF plasmas

H. Akashi (National Defense Academy, Dept.Appl.Phys.), S. Samukawa (NEC,Corp.), N. Takahashi, T. Sasaki (National Defense Academy, Dept.Appl.Phys.)

15:30 NW1.07 A Highly Flexible Simulation Tool for Applied Physics

Nicholas Hitchon (ERC for Plasma-Aided Manufacturing; University of Wisconsin, Madison)

13:30 NW2.01 An Experimental and Computational Investigation of Design Issues in Atmospheric Pressure RF Glow Discharge Reactors

Kei Sakai, P.L.G. Ventzek, Y. Sakai (Hokkaido University), H. Miyajima (Seiko-Epson), H. Tagashira (Hokkaido Institute of Technology)

13:45 NW2.02 Molecular Dynamics (MD) simulations of Reactive Ion Etching (RIE) of a silicon surface by Cl ions.

David E. Hanson, Joel D. Kress, Arthur F. Voter (Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545)

14:00 NW2.03 Electron Transport to a Substrate in an rf Capacitively Coupled Plasma by the Boltzmann Equation

J. Matsui, M. Shibata, N. Nakano, Makabe (Keio University Yokohama, Japan)

14:15 NW2.04 RIE Glow Discharge Tomography

Steven Shannon, James Paul Holloway, M.L. Brake (The University of Michigan)

14:30 NW2.05 Real-time Control and Modeling of Plasma Etching

M. Sarfaty, C. Baum, M. Harper, N. Hershkowitz, J.L. Shohet (ERC for Plasm-Aided Manufacturing, University of Wisconsin-Madison)

14:45 NW2.06 The Applications of Plasma Diagnostic and Simulation in the Development of 300mm Etch Tool

Tom Q. Ni, Wenli Z. Collison, Michael S. Barnes (Lam Research Corp.)

15:00 NW2.07 Correlation between Etch Selectivity and Neutral Radical Composition in High-Density Fluorocarbon Plasmas

K. Nakamura, N. Hirakata, K. Segi, H. Kokura, H. Sugai (Department of Electrical Engineering, Nagoya University)

15:15 NW2.08 Etch Process Sensitivity To An Inductively Coupled Plasma Etcher Treated With Fluorine-Based Plasma

Songlin Xu, Zhiwen Sun, Xueyu Qian, Gerald Yin (Applied Materials Inc)

15:30 NW2.09 Reactive Ion Etching in a VHF Parallel Plate Reactor

H. Dahi, D. E. Murnick (Rutgers University, Newark NJ), M. Meyyappan (NASA Ames Research Center, Moffett Field CA)

15:45 NW2.10 High Density Plasma Etching of GaAs with SiCl_4

Mark Jarnyk (Australian Scientific Instruments), Rod Boswell (Australian National University)