Program overview

TUESDAY AFTERNOON, 7 OCTOBER 1997

Session IT1. Surface Processes.

Tuesday afternoon, 13:30, Class of '24 Reception Room, Memorial Union

13:30 IT1.01 Mass Spectrometry of Plasma/Surface Interactions in High Density Plasma Etching of HgCdTe and ZnSe
C.R. Eddy Jr., D. Leonhardt, V.A. Shamamian, J.E. Butler (U.S. Naval Research Laboratory)
13:45 IT1.02 Secondary Electron and Negative Ion Emission from Oxygen Covered Molybdenum and Stainless Steel
Scott G. Walton, Jack C. Tucek (), Roy L. Champion (College of William and Mary, Williamsburg VA 23187)
14:00 IT1.03 In-situ IR study of chemical processes on Si surfaces
Michio Niwano (Research Institute of Electrical Communication, Tohoku University, Japan)
14:30 IT1.04 Investigation of the relation between arc spot ignition and surface properties of cold cathodes
M. Schumann, D. Nandelstädt, A. Korbel, J. Mentel (Ruhr--Universität Bochum, Germany), J. Schein (University of Minnesota, Minneapolis, MN, USA)
14:45 IT1.05 Wall Relaxation Measurements of the N_2 Ground Vibration States at Low Pressure
John Parish (), Perry Yaney (UDayton)
15:00 IT1.06 Sub-micron retarding field energy analyzer for plasma analysis
Matthew Blain (Sandia National Laboratories)
15:30 IT1.07 Issues in the Application of Mass Spectroscopic Techniques for In Situ Surface Chemistry Monitoring in High Density Plasma Etching
D. Leonhardt, C.R. Eddy Jr., V. A. Shamamian, J. E. Butler (U.S. Naval Research Laboratory, Washington, DC 20375)
15:45 IT1.08 Photoreflectance Studies of the Electronic Properties of Etched GaAs Surfaces
O.J. Glembocki, R.T. Holm, C.R. Eddy, D. Leonhardt, D.S. Katzer (Naval Research Laboratory)

Session IT2. Inductively Coupled Plasmas I.

Tuesday afternoon, 13:30, Tripp Commons, Memorial Union

13:30 IT2.01 Advantages of Using A High Density Plasma Source for FPD Plasma
John P. Holland (Lam Research, Fremont, CA)
14:00 IT2.02 Thomson Scattering Measurements of Electron Temperature and Density in Low Density Discharges
M. D. Bowden, Y. Goto, H. Kudo, K. Uchino, K. Muraoka (Kyushu University, Japan)
14:15 IT2.03 Determination of Electron Temperature, Plasma Density and Cl_2 Percent Dissociation by Optical Emission Spectroscopy
M.V. Malyshev, V.M. Donnelly (Bell Laboratories, Lucent Technologies)
14:30 IT2.04 Effects of discharge frequency and UHF plasma source for precise ULSI patterning
Seiji Samukawa (Microelectronics research laboratories, NEC Corporation)
15:00 IT2.05 Measurements of Relative BCl Density in BCl_3-containing Inductively-Coupled rf Plasmas
C. B. Fleddermann, G. A. Hebner (Sandia National Laboratories)
15:15 IT2.06 Relative atomic chlorine density in chlorine and boron trichloride containing inductively coupled plasmas
G. A. Hebner, C. B. Fleddermann (Sandia National Laboratories)
15:30 IT2.07 Non-local Electrodynamics in Weakly Collisional Inductively Coupled Plasmas.
V.I. Kolobov (University of Houston), V.A. Godyak (Osram Sylvania), D.J. Economou (University of Houston)
15:45 IT2.08 Capacitive Bias Power Coupling in High Density Systems
M. M. Turner, C. K. Birdsall (EECS Department, UC Berkeley, Berkeley, CA 94720), V. Vahedi (Lam Research Corporation, 4650 Cushing Parkway,Fremont,CA 94538)