Session CE - Condensed Matter Physics.
MIXED session, Saturday morning, November 02
Room 222, Morton Hall
Si/Si_1-xGe_x MQW infrared photodetectors offer the promise of normal incidence photodetection tunable over the range of 3-12 \mum at temperatures above 40 K. This system is attractive because Si_1-xGe_x offers greater compatibility with existing Si based signal processing circuitry. Band structures, momentum matrix elements and linear absorption coefficients are computed using a Luttinger-Kohn \bfk \bullet \bfp analysis for Si/Si_1- xGe_x quantum wells grown in the [110] direction. The absorption coefficient as a function of energy is calculated by two methods: a delta function fit to intersubband transitions, and a Lorentzian fit to intersubband transitions. Calculations were performed for parallel as well as normally incident radiation and the resulting absorption spectra are in good agreement with experimental observations.
