Program overview

MONDAY AFTERNOON, 27 SEPTEMBER 2004

Session KM1. Negative Ions & Instabilities.

Monday afternoon, 16:00, Belfast Room, Bunratty Conference Centre

16:00 KM1.001 Instabilities in electronegative ICP-type discharges
N. Plihon, C. S. Corr, P. Chabert, J.-L. Raimbault (LPTP, Ecole Polytechnique, France), A. J. Lichtenberg (EECS, UC Berkeley, USA)
16:15 KM1.002 Negative Ions in a Dual-Frequency Capacitive Plasma in Ar/C_4F_8/O_2.
Jean-Paul Booth, Garrett Curley, Nicolas Bulcourt, Sebastien Dine (Laboratoire de Physique et Technologie des Plasmas, Ecole Polytechnique, Palaiseau, France (CNRS UMR 7648))
16:30 KM1.003 Instabilities in Inductively Coupled Oxygen Plasma
Vanessa Raballand, Gilles Cartry, David Eon, Christophe Cardinaud (IMN-LPCM, 2 rue de la Houssinière, BP 32229, 44322 Nantes cedex 03, France)
16:45 KM1.004 Time Resolved Diagnostics During Low-Pressure Inductively Coupled Fluorocarbon Plasmas Instabilities
Gilles Cartry, Vanessa Raballand, David Eon, Freddy Gaboriau, Christophe Cardinaud (IMN-LPCM, 2 rue de la Houssinière, 44322 NANTES, BP 32229, France)
17:00 KM1.005 Stable and unstable regimes of a helicon discharge
C.S. Corr, N. Plihon, P. Chabert (LPTP, Ecole Polytechnique, France)
17:15 KM1.006 Why it is Better to run an RF Plasma Generator/Matching Network Unmatched, or How to make a More Stable Matching Network/RF Plasma
John H. Keller (K2 Keller Consulting, LLLC)

Session KM2. Material Processing in Low Pressure Plasmas I.

Monday afternoon, 16:00, Dublin Room, Bunratty Conference Centre

16:00 KM2.001 Mass Spectroscopy during Inhibitor Film Desorption from a cryogenic etching process
Remi Dussart (GREMI), Lawrence Overzet (PAL/University of Texas at Dallas), Xavier Mellhaoui, Thomas Chaillou, Antoine Prouet, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson (GREMI), GREMI/Orleans Team, PAL/University of Texas at Dallas Collaboration
16:15 KM2.002 Methodology for Predicting Trench (Gap-) Fill Profiles in High Density Plasma CVD
Ron Kinder, George Papasouliotis, Pramod Subramonium (Novellus Systems)
16:30 KM2.003 Topography Profile Simulation on High Aspect Ratio Oxide Contact Hole Etching: Evolution of Bowed Profiles
Young-Kyu Cho (Samsung Electronics Co.LTD), Sung-Il Cho Collaboration, Cheol-Kyu Lee Collaboration, Ye-Ro Lee Collaboration, Tai-Kyung Kim Collaboration, Kyeong-Koo Chi Collaboration, Chang-Jin Kang Collaboration, Han-Ku Cho Collaboration, Joo-Tae Moon Collaboration
16:45 KM2.004 XPS and Real Time Ellipsometric Investigation of Plasma Nitridation of Silicon and its Chemistry for GaN Growth
T. Ishijima, T. Okada, Y. Honda, H. Sugai (Nagoya University, Japan)
17:00 KM2.005 Plasma etching of SiO_2 and Si_3N_4 with NF_3/C_2H_4 - a new approach to reduce global warming gas production
P. Machima, N. Hershkowitz (Center for Plasma-Aided Manufacturing, University of Wisconsin - Madison)
17:15 KM2.006 Precision CD control for sub-90nm nitride hard mask etching using integrated optical CD measurements
J. W. Shon (Lam Research Corporation), Y. J. Jung, K. J. Min (Samsung Electronics Corp.), Lam Research Dielectric Etch Collaboration, Samsung R amp; D Collaboration