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Session DC - Micro-Fluid Dynamics II: Flow in Microchannels.
MIXED session, Sunday afternoon, November 21
Grand III, Westin Seattle

[DC.005] A Depth-Averaged Model for Electrokinetic Flows in Thin Microchannels

Hao Lin (Mechanical Engineering Department, Stanford Unversity, Stanford, CA 94305), Brian D. Storey (Franklin W. Olin College of Engineering, Needham, MA 02492), Michael H. Oddy, Juan G. Santiago (Mechanical Engineering Department, Stanford University, Stanford, CA 94305)

Electrokinetic instabilities (EKI) present a major challenge to optimizing sample stacking devices, as well as an opportunity to achieve rapid on-chip mixing. These instabilities are due to electric body forces resulting from the coupling of electric fields and conductivity gradients. In this work a generalized electrokinetic model suitable for the study of microchannel flows with conductivity gradients and shallow channel depths was developed. An asymptotic analysis was performed with channel depth-to-width (z-to-y) aspect ratio as a smallness parameter, and the three dimensional flow equations were reduced to a set of depth-averaged equations governing the in-plane (x, y) flow dynamics. The momentum equation uses a Darcy-Brinkman-Forchheimer type formulation, and the convective-diffusive transport of the conductivity field in the depth (z) direction manifests itself as a dispersion effect on the in-plane motion. The validity of the depth-averaged model was assessed by comparing the numerical results with full three dimensional, direct numerical simulations, and experimental data. The depth-averaged equations provide a convenient quasi-two-dimensional model applicable to a wide class of microfluidic devices.

Part D of program listing