THURSDAY AFTERNOON, 23 OCTOBER 2003

Session TR1. High Pressure Discharges and Arcs.

Thursday afternoon, 15:30, California Ballroom, Cathedral Hill Hotel

15:30 TR1.001 Spatiotemporal Diagnostics of Excited and Reactive Species in High Pressure Discharges: Kunihide Tachibana (Department of Electronic Science and Engineering, Kyoto University)
16:00 TR1.002 Neutral Gas Temperature Measurement by Incoherent and Coherent Rayleigh Scattering: Richard Miles (Princeton University)
16:30 TR1.003 Two dimensional simulation of the structure of direct-current microdischarges: Prashanth Kothnur, Laxminarayan Raja (University of Texas at Austin)
16:45 TR1.004 Gas and Electron Temperatures in Atmospheric Pressure High-Density Microdischarge Excited by Microwave: A. Kono, K. Iwamoto, T. Kano (Nagoya University)
17:00 TR1.005 Radio-Frequency Sustainment of Laser Initiated, High-Pressure Air Constituent Plasmas*: Kamran Akhtar, John Scharer, Shane Tysk, Mark Denning (Electrical and Computer Engineering Department,University of Wisconsin-Madison 53706)
17:15 TR1.006 Three-Dimensional Modeling of Arc-Anode Attachments in Transferred Arcs: He-Ping Li, Emil Pfender, Joachim V. R. Heberlein (Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455)

Session TR2. Fluorocarbon Etch Mechanisms.

Thursday afternoon, 15:30, International Ballroom, Cathedral Hill Hotel

15:30 TR2.001 Uncertainty analysis of C_4F_8 based plasma chemistry in the gas phase: Deepak Bose (Eloret Corp.), Shahid Rauf (Motorola, Inc.), D.B. Hash, T.R. Govindan (NASA Ames Research Center)
15:45 TR2.002 Etch mechanisms of low-k materials in Inductively Coupled Fluorocarbon Plasmas: D. Eon, V. Raballand, G. Cartry, M.C. Peignon-Fernandez, C.H. Cardinaud, IMN-LPC Collaboration
16:00 TR2.003 Role of the fluorocarbon radical in silicon etching: Molecular dynamics simulations: David Humbird, David B Graves (Department of Chemical Engineering, University of California at Berkeley), Xuefeng Hua, Gottlieb S Oehrlein (Department of Materials Science and Engineering and Institute for Research in Electronics and Applied Physics)
16:15 TR2.004 Plasma parametric study in an ICP reactor and etching optimization: Remi DUSSART, Philippe LEFAUCHEUX, Thomas TILLOCHER, Pierre RANSON (GREMI), Pascal CHABERT (LPTP), GREMI Team, LPTP Collaboration
16:30 TR2.005 Etching of High Aspect Ratio Structures in Si using SF_6-O_2 Plasmas: Sergi Gomez, Jun Belen, Eray S. Aydil (University of California Santa Barbara, Santa Barbara, CA.), David Cooperberg, Mark Kiehlbauch (Lam Research Corporation, Fremont, CA.)
16:45 TR2.006 Etching silicon by SF6 in a continuous and pulsed power helicon reactor: Andrew Herrick, Andrew Perry, Rod Boswell (Australian National University)
17:00 TR2.007 Toward charging free plasma etching; Insitu measurement of negative charge injection and charge reduction in a contact hole: Takeshi Ohmori, Toshiaki Makabe (Keio University, Yokohama Japan)
17:15 TR2.008 Validity of Binary Collision Theory in Ion-Surface Interactions at 50-500 eV: Michael Gordon, Kostas Giapis (California Institute of Technology)