WEDNESDAY AFTERNOON, 22 OCTOBER 2003

Session MW1. Lighting I.

Wednesday afternoon, 15:30, California Ballroom, Cathedral Hill Hotel

15:30 MW1.001 Behavior of metal halide lamps under microgravity and hypergravity conditions: Gerrit Kroesen (Eindhoven University of Technology)
16:00 MW1.002 Near Infrared Emission from Metal Halide Lamps with Rare Earth Salts: J. E. Lawler (Univ. of Wisconsin-Madison)
16:15 MW1.003 Plasma Dynamics and Thermal Effects during Startup of Metal Halide Lamps: Ananth Bhoj (Dept. Chemical and Biomolecular Engr., University of Illinois, Urbana, IL 61801), Gang Luo (Dept. Mechanical and Industrial Engr., University of Illinois, Urbana, IL 61801), Mark J. Kushner (Dept. Electrical and Computer Engr., University of Illinois, Urbana, IL 61801)
16:30 MW1.004 Radiation Trapping in Electrodeless Lamps: Complex Geometries and Operating Conditions: Kapil Rajaraman (Dept. of Physics, University of Illinois, Urbana, IL 61801), Mark J. Kushner (Dept. of Electrical and Computer Engr., University of Illinois, Urbana, IL 61801)
16:45 MW1.005 High Intensity Electrodeless Lamps Excited by Circularly Polarized Microwave Discharges: Jin Joong Kim, Dong Ho Won (Affiliation), Jung Tae Ko (Dept of Optical Engineering, Sejong University), Jeong Won Kim (Taewon Lighting Ramp;D Laboratory)
17:00 MW1.006 Frequency dependence in Xe Dielectric Barrier Discharges Excimer Lamp: Haruaki Akashi (Dept. Appl.Phys., National Defense Academy, Japan), Akinori Oda (Dept.Sys.Eng., Nagoya Institute of Technology, Japan), Yosuke Sakai (Dept.Eng., Hokkaido University, Japan)
17:15 MW1.007 A Xenon dielectric barrier discharge lamp (172nm) with a fast-pulse voltage driver: Influence of the voltage waveform on plasma kinetic issues and light output.: Robert Carman, Barry Ward, Richard Mildren, Deborah Kane (Physics Dept, Macquarie University, North Ryde, Sydney, NSW 2109, Australia)

Session MW2. Material Processing I.

Wednesday afternoon, 15:30, International Ballroom, Cathedral Hill Hotel

15:30 MW2.001 Why we need more tuning knobs in plasma etching – and what knobs work best: Richard Gottscho (Lam Research Corporation)
16:00 MW2.002 Plasma-walls interaction and process drifts during silicon gate etching processes: Gilles Cunge (CNRS-LTM)
16:30 MW2.003 Device Damage Reduction in Metal Etch Chambers by Pulsed Source Plasma: Alex Paterson, John Yamartino, Yasushi Takakura, John Holland, Mike Barnes (Applied Materials, Inc)
16:45 MW2.004 Etching of a Deep Small Contact Hole for sub 80nm ULSIs: Enhancement of Aspect Ratio Dependent Etching and Selectivity to Masking Layers: Sung-Il Cho, Kyeong-Koo Chi, Chang-Jin Kang, Woo-Sung Han, Joo-Tae Moon (Semiconductor Ramp;D Center, Samsun Electronics Co. Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea)
17:00 MW2.005 Design and Development of a Novel Dual Gas Delivery System in a Plasma Reactor: Nicolas Gani, Meihua Shen, Yan Du, Wilfred Pau, John Holland, Theodoros Panagopoulus, Valentin Todorow, Patrick Leahey, Hoan Nguyen (Applied Materials)
17:15 MW2.006 The first wafer effect in the gate etching of DRAM with high density plasma etcher: Y.J. Jung, K.J. Min, C.J. Kang, W.S. Han, J.T. Moon (Samsung Electrocs Company Limited), Process Development Team