Tight Binding Electronic Structure Calculation of (GaAs)_n/(Ge_2)

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Session L36 - General Poster Session II.
POSTER session, Wednesday morning, March 22
Exhibit Hall, MCC

[L36.043] Tight Binding Electronic Structure Calculation of (GaAs)_n/(Ge_2)_n (2 \leq n \leq 4)

Jeffrey Rufinus (University of Wisconsin)

We have performed a calculation of electronic structure of (GaAs)_n/(Ge_2)_n Superlattice (2 \leq n \leq 4) with Tight Binding Method. We have found that the band-gaps are direct. Previous self-consistent pseudopotential calculations also showed that in the range of ( 2 \leq n \leq 4) the band-gaps of (GaAs)_n/(Ge_2)_n are direct.

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