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Session J15 - Optical Properties of Bulk Semiconductors I.
MIXED session, Wednesday morning, March 20
Room 223, America's Center
In the course of developing a self-consistent set of optical constants for silicon over an extended wavelength range, we have encountered inconsistencies between experimental measurements of the absorption coefficient and electron energy-loss spectra. The UV/soft x-ray transition region between the bulk plasmon energy (\approx 16.7 eV) and the L-edge (\approx 100 eV) was particularly troublesome. To arrive at a best estimate of the optical properties, we have relied on the more numerous electron energy-loss measurements to augment the sparse absorption coefficient measurements. We will present tentative results and show that the electron energy-loss data allow us to overcome mismatches in the magnitude of the absorption data while preserving the detail present in the absorption measurements.