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Session J15 - Optical Properties of Bulk Semiconductors I.
MIXED session, Wednesday morning, March 20
Room 223, America's Center

[J15.07] Raman Scattering, Photoluminescence, and Transmission Spectra of porous p-type 6H-SiC

G. Chang, S. Kim, I.P. Herman (Columbia University), J.E. Spanier (Kulite Semiconductor Products, Inc. and Columbia University), D.R. Goldstein, A.D. Kurtz (Kulite Semiconductor Products, Inc.)

We have studied the Raman scattering, PL, and optical transmission of porous p-type 6H-SiC prepared via dark-current anodization at low current densities. At room temperature, the width of the Raman scattering peaks from porous SiC are broader and their positions are shifted relative to those of bulk SiC. An explanation for these observations is proposed and discussed here. The lineshapes of the PL spectra from the free-standing samples of porous p-type SiC are largely independent of temperature. The room temperature PL spectra suggest different mechanisms for recombination in porous and bulk SiC. While the transmission spectrum from bulk SiC reveals a relatively sharp edge corresponding to its bandgap at 3.0 eV, the porous SiC spectrum edge is too wi de to determine the bandgap.

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