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Session Q14 - DCMP: SEMICONDUCTORS: MAGNETISM
Mixed session, Friday morning, March 24, 8:00
Room J4, San Jose Convention Center
Using time-resolved photoluminescence we measure the spin relaxation rate of excitons in strained \(\mboxZn_1-x\mboxMn_x\mboxSe\)/ZnSe and \(\mboxZn_1-x\mboxMn_x\mboxSe\)/ \(\mboxZn_1-x\mboxFe_x\mboxSe\) quantum wells. Recently, it was shown in \(\mboxZn_0.98\mboxMn_0.02\mboxSe\) epilayers that strain increases the exciton spin-relaxation time by over 3-orders of magnitude to approximately one nanosecond. Poweleit et al., Proceedings of the 22nd International Conference of the Physics of Semiconductors, (World Scientific, April 1995) We show in similar strained epilayers that the measured spin-relaxation rate is a strong function of Mn-concentration: reducing by over an order of magnitude when the Mn-concentration is increased to 4%. We compare these results with measurements in strained \(\mboxZn_1-x\mboxMn_x\mboxSe\)/ZnSe and \(\mboxZn_1-x\mboxMn_x\mboxSe\)/ \(\mboxZn_1-x\mboxFe_x\mboxSe\) quantum wells to determine whether confinement and interface effects can have an additional affect on the exciton spin relaxation rate.