Measurements of Minority-Carrier Lifetimes in n-type Cl-Doped \(\mboxZn_1-x\mboxMn_x\mboxSe\) and ZnSe Epilayers

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Session Q14 - DCMP: SEMICONDUCTORS: MAGNETISM
Mixed session, Friday morning, March 24, 8:00
Room J4, San Jose Convention Center

[Q14.08] Measurements of Minority-Carrier Lifetimes in n-type Cl-Doped \(\mboxZn_1-x\mboxMn_x\mboxSe\) and ZnSe Epilayers

L. M. Smith,G. A. Balchin,C. D. Poweleit (Department of Physics, University of Cincinnati),H. Abad,B. T. Jonker (Naval Research Laboratory)

Recently, the first successful n-type doping of \(\mboxZn_1-x\mboxMn_x\mboxSe\) was reported. We use time-resolved photoluminescence to measure the minority-carrier lifetime in Cl-doped ZnSe and \(\mboxZn_1-x\mboxMn_x\mboxSe\) epilayers. We find that the minority carrier lifetime in Cl-doped ZnSe is long and depends upon the majority carrier concentration. However, the addition of small amounts of Mn decreases the minority carrier lifetimes by several orders of magnitude. In addition, this shorter lifetime is also independent of Mn-concentration. This appears to suggest that even though the Cl is electrically active with majority carrier concentrations exceeding \(\mbox10^18\) \(\mboxcm^-3\) in these DMS epilayers, the minority-carrier lifetime may be dominated by non-radiative recombination centers.

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