Internal Photoemission of newly developed semiconductor structures using a free electron laser

Session Q14 - DCMP: SEMICONDUCTORS: MAGNETISM
Mixed session, Friday morning, March 24, 8:00
Room J4, San Jose Convention Center

[Q14.07] Internal Photoemission of newly developed semiconductor structures using a free electron laser

G. Mensing,R. G. Albridge,A. V. Barnes,J. T. McKinley,N. H. Tolk (Dept. of Physics and Astronomy, Vanderbilt University),J. Davidson (Dept. of Electrical Engineering, Vanderbilt University),B. McCombe,A. Petrou,M. Salib (Dept. of Physics, State University of New York, Buffalo)

The high power and tunability of the Vanderbilt University Free Electron Laser (VU-FEL) in the range of 2um - 10um is ideally suited to probe the electronic properties of semiconductor structures. Recent developments in technology have yielded such technically interesting semiconductor structures such as diluted magnetic semiconductors, diamond schottkey barriers, and GaAs homojunctions with silicon delta layers. Internal photoemission (IPE) is a well established technique for directly probing the energy gaps of these semiconducting materials, and the VU-FEL provides an ideal infrared source. Results that will be discussed include: band offsets of diluted magnetic semiconductors in the absence of a magnetic field, schottkey barriers of diamond films with select metal contacts, and effects of Si-delta layers on the band gap of GaAs homojuctions. IPE is a valuable tool for direct measurements in highly advanced electronic devices. Characterization of these devices may provide new understanding that may be used to create new technology for the future.

Part Q of program listing