Optical Response of GaAs Under Magnetic Field

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Session Q14 - DCMP: SEMICONDUCTORS: MAGNETISM
Mixed session, Friday morning, March 24, 8:00
Room J4, San Jose Convention Center

[Q14.06] Optical Response of GaAs Under Magnetic Field

Mary-Ann Mycek,Uwe Siegner,Stephan Glutsch,Daniel S. Chemla (Department of Physics, University of California at Berkeley and Material Sciences Division, Lawrence Berkeley Laboratory)

It is well known that the optical response of a semiconductor is strongly modified by effects due to Coulomb correlation. Under the application of an external magnetic field to GaAs, we measure directly from the linear absorption profile manifestations of such coupling in the form of Fano resonances. In this system, Fano interference results from correlation between discrete magnetoexciton levels and the energetically degenerate continuum of states. Numerical calculations modelling the semiconductor in the effective mass approximation demonstrate that the origin of the coupling is Coulomb interaction.

Part Q of program listing