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Session Q14 - DCMP: SEMICONDUCTORS: MAGNETISM
Mixed session, Friday morning, March 24, 8:00
Room J4, San Jose Convention Center
Far-infrared magneto-transmission studies have been carried out on bulk GaN samples grown on sapphire substrate. GaN is a wide gap semiconductor. The applied magnetic field is up to 27 Tesla, and the temperature of the measurements is from 2 K to 50 K. A resonance feature is observed for fields above 10 Tesla on one "dirty" sample. The minimum of the resonance is about 222 cm^-1 and shifts up by about 3 cm^-1 per Tesla. The temperature dependence of the line suggests that it is an impurity-related feature.