Electronic Band Structure of DC-Sputtered Bi _2 Sr _2 CaCu _2 O

Electronic Band Structure of DC-Sputtered Bi _2 Sr _2 CaCu _2 O _8+\delta

Session Q11 - HTSC: PHOTOEMISSION
Mixed session, Friday morning, March 24, 8:00
Room B3, San Jose Convention Center

[Q11.03] Electronic Band Structure of DC-Sputtered Bi _2 Sr _2 CaCu _2 O _8+\delta

B. Beschoten,G. G\"{u}ntherodt (2. Physikalisches Institut, RWTH-Aachen, D-52056 Aachen, Germany),Jian Ma,C. Quitmann,M. Onellion (Department of Physics, University of Wisconsin, Madison, WI. 53706),J. Auge (Institut f\"{u}r Halbleitertechnik II, RWTH-Aachen, D-52056 Aachen, Germany)

Using angle-resolved photoemission we have successfully studied electronic band structure features of DC-sputtered Bi _2 Sr _2 CaCu _2 O _8+\delta thin films for the first time. We report a cleaving method for thin films that results in observing normal-state photoemission features identical to those observed for cleaved single crystals. Thin films are attractive because their stoichiometry can be varied over a wider range than for single crystals. The oxygen surplus \delta can continuously be controlled in-situ during the sputtering process, yielding samples from the underdoped regime with T _C = 40K to the overdoped regime with T _C =60K, going over a maximum of T _C =94K. Consequently this method appears suitable for studying the electronic band structure and superconducting properties, on thin films with a wide variety of oxygen contents.

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