Effect of Electron Doping on the Electronic Sturcture of Bi _2 Sr _2 CaCu _2 O _8-\delta - an Angle Resolved Phototemission Study

Previous abstract Next abstract

Session Q11 - HTSC: PHOTOEMISSION
Mixed session, Friday morning, March 24, 8:00
Room B3, San Jose Convention Center

[Q11.02] Effect of Electron Doping on the Electronic Sturcture of Bi _2 Sr _2 CaCu _2 O _8-\delta - an Angle Resolved Phototemission Study

D.S. "Scooter" Marshall,C.H. Park,A.Y. Matsuura,D.S. Dessau,Z.-X. Shen,W.E. Spicer (Stanford Electronics Labs, Stanford University, Stanford, CA 94305),J.N. Eckstein,I. Bozovic (E. L. Ginston Research Center, Varian Associates, Palo Alto, CA 94304)

We report our angle resolved photoemission spectroscopy (ARPES) results from electron-doped Bi _2 Sr _2 CaCu _2 O _8-\delta thin films grown with molecular beam epitaxy (MBE). We doped this material with electrons by replacing the Calcium with Dysprosium in concentrations from undoped to 35% Dysprosium. The superconducting critical temperatures of the samples ranged from 80K for low concentrations of Dy down to 25K for 35% Dy. ARPES reveals a monotonic trend in the spectral weight, dispersion, and superconducting spectral shape with Dysprosium doping. We comment on this trend and its implications on the nature of the quasiparticles.

Part Q of program listing