Optical Inter-Conduction-Subband Transitions in Direct Band-Gap Semiconductor Quantum Wells

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Session M14 - DCMP: HETEROSTRUCTURES: OPTICAL PROPERTIES OF QUANTUM WELLS: THEORY
Mixed session, Thursday morning, March 23, 8:00
Room J4, San Jose Convention Center

[M14.12] Optical Inter-Conduction-Subband Transitions in Direct Band-Gap Semiconductor Quantum Wells

Rui Q. Yang (Dept. of ECE, Univ. of Toronto, Canada, and CYC Tech., Toronto)

Based on a one-band model including the spatial variation of effective mass in quantum well structures, it has shown how the in-plane polarized optical inter-conduction-subband transition could simply occur in direct band-gap semiconductor heterostructures, which is commonly believed to be forbidden. A novel approach has been proposed for manipulating optical properties through the band-gap engineering based on the spatial characteristics of wave-functions. Calculations for optical intersubband transitions in the conventional square quantum wells and modified quantum well structures have been carried out, which support the proposed quantum wave-function engineering approach to the realization of a desirable optical property in quantum well systems.

Part M of program listing