Previous abstract|Graphical version|Text version|Next abstract

Session CC - Condensed Matter I.
MIXED session, Friday morning, November 15
Henry Oliver E, Holiday Inn

[CC.12] Photoluminescence of a-Si:H using a Free Electron Laser

Glennys A. Mensing, E. Hurt, J. Gilligan, N. Tolk (Vanderbilt University), P. C. Taylor (University of Utah)

Below gap excitation of photoluminscence (PL) in device quality a-Si:H has been studied using an intense, tunable Free Electron Laser (FEL). The range of the exciting light from the FEL is between .7 and 1.2 eV which is well below the optical gap of approximately 1.8 eV. The PL was measured in the range of .7 to 1.8 eV at a temperature of 77K. Results will be compared to previous measurements using other infrared sources at higher energies.

Part C of program listing