11:00
N20 1 Persistent Photocurrent in Thin, Undoped GaInP/GaAs Quantum Well
S. Elhamri, M. Ahoujja, R.S. Newrock, University of Cincinnati,
W.C. Mitchel, Ikai Lo, Wright Laboratory, Materials Directorate, W-PAFB,
M. Razeghi and Xiaoguang He, Center for Quantum Devices, Northwestern
University
11:12
N20 2 Observation of Negative Persistent Photocunductivity (NPPC)
in AlGaAs/GaAs Heterostructures Under Sub-Bandgap Illumination
J.C. Licini, Department of Physics, Lehigh University, M. Spector,
L.N. Pfeiffer, K.W. West, AT&T Bell Laboratories
11:24
N20 3 Magnetic Field Modulation Studies of the Two-Dimensional
Magnetophonon Effect in GaAs
C.A. Richter, D.G. Seiler, B. Roughani, P.M. Amirtharaj, NIST,
and K.R. Evans, Solid State Electronics Directorate, Wright Laboratory,
WPAFB
11:36
N20 4 Characterization of Closely Spaced Parallel 2D Electron and Hole
Gases in a High Mobility GaAs/Al_xGa_1-xAs Heterostructure
B.E. Kane, W. Wegscheider, L.N. Pfeiffer, and K.W. West, AT&T Bell
Laboratories
11:48
N20 5 Coupled-Layer Electron System in Wide Parabolic GaAs/Al_xGa_1-xAs
Quantum Wells
J.H. Baskey, and R.M. Westervelt, Harvard University, M. Sundaram,
P.F. Hopkins, and A.C. Gossard, UCSB
12:00
N20 6 Spontaneous and Stimulated Terahertz Oscillations in
Double-Quantum-Well Semiconductor Heterostructures
A.N. Korotkov, D.V. Averin, and K.K. Likharev, SUNY at Stony Brook
12:12
N20 7 In-Plane Conductance of Double Quantum Wells in In-Plane Magnetic
Fields: Effect of Level Anti-Crossing
J.A. Simmons, S.K. Lyo, N.E. Harff, and J.F. Klem, Sandia National
Laboratories
12:24
N20 8 Transport in Double Quantum Wells with In-Plane Magnetic Fields:
Effects of Field-Induced Level-Anticrossing
S.K. Lyo and J.A. Simmons, Sandia National Laboratories
12:36
N20 9 Germanium Isotope Heterostructures
H.D. Fuchs and E.E. Haller, University of California at Berkeley and
Lawrence Berkeley Laboratory, Berkeley, CA 94720
12:48
N20 10 Electrical and Optical Properties of Phototransistors Based on
AlGaN/GaN Heterostructures
J.N. Kuznia, S. Krishnankutty, A.R. Bhattarai, D.T. Olson, and
M. Asif Khan, A.P.A. Optics, Inc.
13:00
N20 11 Low Frequency Noise in InP/InGaAs Heterojunction Bipolar Transistors
S. Martin, P.R. Smith, M. Haner, R.K. Montgomery, R.A. Hamm,
A. Feygenson, and R.D. Yadvish, AT&T Bell Laboratories
13:12
N20 12 Crossover in Energy Relaxation Rate of Terahertz-Driven Carriers
in AlGaAs Heterostructures
N.G. Asmar, A.G. Markelz, E.G. Gwinn, K.L. Campman, P.F. Hopkins,
A.C. Gossard, UC Santa Barbara
N20 13 Electron Transport Across a Biased Delta-Doped Quantum Well Containing a Bound State M.W.C. Dharma-Wardana, National Research Council of Canada